Metrology and Process Integration for defect mapping of next generation semiconductor materials and devices
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Development of Metrology and Wafer Mapping Techniques for SiC, GaN, and GaO Semiconductors
This PhD project aims to develop advanced metrology and wafer mapping techniques for defect analysis in semiconductor materials such as Silicon Carbide (SiC), Gallium Nitride (GaN), and Gallium Oxide (GaO). The project will leverage machine learning to…
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