grant
Collaborative Research: Low-noise high electron mobility transistors with outstanding noise performance via atomic layer etching
Organization Board of Regents, NSHE, obo University of Nevada, RenoLocation RENO, United StatesPosted 1 Oct 2025Deadline 30 Sept 2028
NSFUS FederalResearch GrantScience FoundationNV
Description preview
This program aims to create semiconductor amplifiers with outstanding noise performance in the microwave spectrum. Researchers from the California Institute of Technology (CalTech) and the University of Nevada-Reno (UNR) will accomplish this goal by leveraging a new nanofabrication method, atomic layer etching, which permits semiconductor device…
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